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(Bild: GAC Aion) The next generation of electric cars requires more and more SiC semiconductors, much to the delight of their manufacturers. The recent cooperation agreement between Infineon and Stellantis, who aim to jointly develop high-performance silicon carbide chips, is based on this trend.
To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay Intertechnology introduced a new 150 V
Targeting industrial and energy applications with motor drives for air conditioning, home appliances and factory automation, as well as power control in charging stations, energy storage systems, and power supply units STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection …
EPC Space’s rad-hard GaN products enable long-lasting performance in harsh space conditions, driving the future of space exploration.The post GaN Technology Takes Center Stage at Electronica 2024 with EPC Space appeared first on Power Electronics News.
The Silicon Carbide Fibers Market intelligence report just published by USD Analytics Market covers a micro level study of important market niches product offers and sales channels To determine market size potential growth trends and competitive environment the Silicon Carbide ...
The SiC metal-oxide-semiconductor field effect transistor (MOSFET), as a third-generation wide-bandgap semiconductor, possesses advantages such as low on-resistance, high power density, fast switching speed, and low switching losses, making it a promising candidate in aerospace equipment. However, electrons in space can cause total ionizing dose (TID) effects, leading to the performance degradation of electronic components, especially in deep space environments with high-energy and high-flux electron irradiation. In this study, electron irradiation induced TID effects were experimentally investigated in SiC MOSFETs with different structures of double trench (DT) and asymmetric trench (AT). The DT-MOSFET was found to be more sensitive to TID effects. Furthermore, the technology computer aided design (TCAD) simulation was performed to reveal the mechanism of the trench structure dependent TID effects. It was revealed that compared to DT-MOSFET, the semi-enclosed P+ well structure in the AT-MOSFET provides protection to the bottom of the gate oxide layer, reducing the electric field intensity in that region and suppressing the impact of TID effects.
Industrial technology manufacturing company Littelfuse has expanded its range of Ultra Junction X4-Class 200 V Power MOSFETs with low on-state resistance for battery energy storage and power supply applications. The IXTN400N20X4 and IXTN500N20X4 have around two times higher current ratings and a 63% RDS(on) reduction than existing X4-Class MOSFETs, according to the company, making them... Read more »
As part of our video series Women @ MCL, we would like to introduce Larissa Egger today. She works as Senior Scientist Sensor Solutions at the Department of Microelectronics. Link to video ***Women @ MCL: Larissa EggerAls Teil unserer Videoserie Women @ MCL möchten wir heute Larissa Egger vorstellen. Sie arbeitet als Senior Scientist Sensor Solutions im Department Microelectronics.
The increasing interest in battery EVs has accelerated the deployment of WBG semiconductors for improving efficency and attaining longer drive ranges.The post WBG Multilevel Inverters Cater to 800-V Battery EVs appeared first on Power Electronics News.
SAN JOSE, Calif., Nov. 4, 2024 – Power Integrations (NASDAQ: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today introduced a new member of its InnoMux-2 family of single-stage, independently regulated multi-output offline power supply ICs. The new device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary […]
Der Generator für Verlustleistungsmodelle umfasst jetzt auch passive Komponenten, um Designs noch genauer zu modellieren.
SK Group's silicon wafer manufacturer SK Siltron has confirmed that it will receive a loan of US$544 million from the US Department of Energy (DOE) to invest in its silicon carbide (SiC) wafer factory at its US subsidiary, SK Siltron CSS, which is expected to commence production in 2025.
With the increasing adoption of EVs and a growing focus on environmental sustainability, electric motors are expected to be used more extensively.The post Electric Motors: The Key to Energy Efficiency and Sustainability appeared first on Power Electronics News.
The sic wafer cleaning equipment market represents a dynamic and continually evolving landscape shaped by changing consumer demands and technological advancements In this comprehensive report we provide an in depth exploration of the market designed for a wide range of ...
A recent PowerUP podcast featuring experts from Nexperia focused on the company’s SiC and GaN product portfolios and their application space.
Advanced Technology Vehicles Manufacturing Loan Program targets SiC supply for EVs
Toshiba's TB9083FTG IC, meeting ISO 26262 standards, is integrated into Mikroe's Brushless 30 Click for advanced automotive applications
GaN-on-SiC-based MMICs with limited production capability established at GAETEC
As we transition to a more sustainable future, V2G technology is emerging as a major innovation in EVs.The post EVs and the Future of Energy: Innovation Behind V2G appeared first on Power Electronics News.
The global Silicon Carbide SiC MOSFETs market is experiencing rapid growth driven by increasing demand for high performance power electronics across multiple industries Silicon carbide MOSFETs known for their efficiency and durability are fast becoming essential in applications requiring robust ...
The global Silicon Capacitors Market is experiencing significant growth fueled by rapid advancements in technology and the increasing demand across various high tech applications As of 2022 the market was valued at US 1 6 billion and is projected to ...
Standardized power semiconductor chip can extend driving range and lower power costs for xEVs
Future of Space Power Electronics Market is projected to High USD 1088.76 million Growth Predicted by 2032
Toshiba has developed new 1200V silicon carbide (SiC) MOSFETs with low on-resistance (RDS(ON)) and high levels of reliability. The devices are particularly suited to applications within automotive traction inverters. They are now available and shipping as early test samples in bare die format – allowing customers to customise them to meet the needs of their
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